Join CEA-LETI for a very exciting experience working on both innovative
materials (Transition Metal Dichalcogenide) and promising ferroelectric
memory devices (FeRAM). This internship offers the chance to work on a
groundbreaking project, with potential to continue into a thesis. If you're
curious, innovative, and eager for a challenge, you’re welcome to join us!

The emergence of artificial intelligence, machine learning and Internet of
things has driven the need for more storage memories with high operation
speed and non-volatile characteristics. Today, non-volatile ferroelectric
memory technology, consisting of a Metal/Ferroelectric/Metal capacitor
(FeCAP) connected to the drain of a select transistor, is very promising due to
its high endurance, low writing voltage and good retention. The future of 1T1C
ferroelectric memory requires innovation through ultra-low leakage selector
devices. Here, we propose to investigate MoS2 transistors, as selector. This
innovative 2D material received considerable interest over the last few years,
for integrated memory devices. In this work, we propose to exploit their atomic
thickness, wide band-gap, large On/Off ratio, to open the path towards ever
denser and low-power 1T1C memory array, integrated in the back-end-of-line
metallization layers.

Throughout this internship, you will acquire a wide range of knowledge,
covering microelectronic processes, MOSFET transistor fabrication and
characterization, while meeting the requirements of integrating this MoS2-
based selector into the BEOL. You will collaborate with multi-disciplinary
teams to develop an in-depth understanding of 2D materials and ferroelectric
memory devices as well as a wide range of potential applications. You will
also be part of a memory device laboratory, working alongside a team of
several permanent researchers (material, integration, electrical
characterization and simulation) to support you in this research project.

Join us on our internship !

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As an intern at CEA, you'll have the opportunity to work in a world-renowned
world-renowned research environment. Our teams are made up of passionate and dedicated experts, offering an environment conducive to learning and
collaboration. You'll have access to state-of-the-art equipment and first-rate
resources to carry out your assignments.

With a background in microelectronics and a passion for technological
research, you are curious, eager to learn, and possess strong communication skills. You have a keen interest in approaches that combine innovative material with emerging devices, particularly in the context of ferroelectric memory for energy-efficient Artificial Intelligence.

Still in doubt? We can offer you :

• Experience at the cutting edge of innovation, with strong potential for industrial development,
• Exceptional experimental resources and top-quality supervision,
• Real career opportunities at the end of your internship,
• A position in the heart of the Grenoble metropolitan area, easily accessible via the soft mobility encouraged by the CEA,
• 85% contribution to public transport costs,
• A recognized work-life balance,
• A company restaurant,
• A diversity and inclusion policy.

Join us, develop your skills and acquire new ones!

In line with CEA's commitment to the integration of disabled people, this job is open to all. The CEA offers accommodation and/or organizational possibilities for the inclusion of disabled workers.