Context

The arrival of 5G—and the upcoming transition to 6G—introduces new challenges in both the performance and reliability of RF transistors. Depending on the specific RF application, our partners are exploring various technology options to meet these increasingly demanding requirements, including different CMOS platforms (such as RFSOI and FinFET) as well as BiCMOS technologies. It is therefore essential to evaluate the strengths and weaknesses of each approach to determine which is best suited for a given application. This requires a thorough understanding of the electrical behavior and reliability of the associated PA (Power Amplifier) and LNA (Low Noise Amplifier) transistors under RF operating conditions.

Work Description

The work will primarily focus on the RF characterization of MOSFET transistors for Wi-Fi and 5G/6G Power Amplifiers. This includes the development and implementation of novel testing and instrumentation methodologies, particularly concerning transistor aging. Testing will be conducted mainly at the wafer level using RF probes.

With support from an RF characterization engineer, the selected candidate will be responsible for:

• Implementing small-signal modeling of MOSFET transistors based on S-parameter measurements
• Characterizing the aging behavior of MOSFET transistors under both DC and RF operating conditions
• Conducting physical analyses to explain observed degradation phenomena, in relation to the underlying technological processes
• Modeling transistor aging and its impact on DC and RF (small-signal) performance parameters
• Developing new RF characterization methodologies, including square AC signal testing relevant to digital applications
• Regularly reporting to project teams to interpret results and propose strategies for improving component reliability
• Contributing to the evolution of test benches and developing control software for associated instruments (e.g., Agilent and Keysight systems)

 The project will be carried out in close collaboration with industrial partners.

Education

• Engineer (Master/Bac+5) with a strong experience in the field of electrical RF transistor characterization or PhD (Bac +8) in radio frequencies.
• A good knowledge of semiconductor physics is required as well as  in programming and data processing tools (Python/Mathcad) .

 Technical skills 

• Physics of semiconductors
  • MOSFET transistor working and modeling under DC and RF operation
  • Reliability challenges of MOSFET transistors
• Radiofrequency characterization: S-parameter measurements, de-embedding techniques, large-signal measurements
• Active and passive components used in RF
• Instrumentation for the measurement of semiconductor components
• Control of measuring instruments (Python)
• Fluent English required (reporting and presentations)

Soft skills

• Autonomy
• Rigor
• Strength of proposal
• Open-minded

In accordance with the commitments made by the CEA to support the inclusion of people with disabilities, this position is open to everyone. The CEA offers accommodations and/or organizational options to support the inclusion of workers with disabilities.