A high resistivity substrate is essential for the design of state-of-the-art high-frequency circuits. The high-resistivity silicon-on-insulator (SOI) substrate with a trap-rich layer below the buried oxide (BOX) is the option with the highest performance at present for CMOS technologies. However, these substrates have two major limitations: (1) their relatively high price and (2) the degradation of their RF performance at operating temperatures above 100 °C.

As part of this postdoctoral study, we propose to adopt a disruptive approach based on the use of resistive and/or trap-rich substrates over their entire thickness (several hundred μm). Trapping of mobile charges throughout the entire substrate volume should provide stable RF performance even at high operating temperatures. In this
context, resistive polycrystalline substrates are particularly promising, since they present a high density of traps due to the presence of grain boundaries.

This project will be carried out in collaboration with the RF SOI Group at the Catholic University of Louvain (UCLouvain), which is internationally recognized for its expertise in the modeling and measuring the high-frequency electrical performance of RF substrates and devices.

The person hired will participate in the following research:

(1) Screening of promising polycrystalline substrates from TCAD simulations.

(2) Definition of the integration strategy of these polycrystalline materials into SOI substrates using a Manufactufing Execution System.

(3) Monitoring of the process flow advancement in the LETI clean rooms in conjunction with the operational teams.

(4) Analysis of the processed SOI substrate morphological properties through material
characterization techniques available at LETI.

(5) Measurement of RF performances in frequency and temperature at UCLouvain. A
particular attention will be placed on understanding the physical phenomena involved
through the comparison of experimental and simulation data.

The candidate must hold a PhD degree in materials science, nanosciences, or electrical engineering. Furthermore, the candidate have a strong background in some of the following fields: solid state physics, microelectronic processes, frequency behavior of semiconductor devices, high frequency measurement, and TCAD
simulations.

French language proficiency is also recommended.

The candidate is expected to exhibit strong analytical skills to tackle complex problems, as well as curiosity and proactivity. Finally, the candidate will be required to have frequent interactions with operational teams and experts, and therefore demonstrates excellent interpersonal skills.

Why join our team? We can offer you :

• Experience at the cutting edge of innovation, with strong potential for industrial development,
• Training to reinforce your skills or acquire new ones,
• A position in the heart of the Grenoble metropolitan area, easily accessible via the soft mobility encouraged by the CEA,
• 85% contribution to public transport costs,
• A recognized work-life balance,
• A policy of diversity and inclusion,
• Company restaurants,
• An active CSE in terms of leisure and extra-professional activities,
• A savings scheme matched by the CEA.

In line with CEA's commitment to the integration of disabled people, this job is open to all. The CEA offers accommodations and/or organizational possibilities. Join us!