Nowadays, data production grows exponentially due to the massive use of connected devices, intelligent systems and proliferation of data centers causing memories to be an R&D priority. Memories are electronic components used for temporary storage of data. There are two main categories of memory, stand-alone and embedded memories. The later, is adopted by the research community and several types of “emerging” memories exist based on various physical effects: phase change memories (PCM), resistive memories (ReRAM such as OXRAM) or ferroelectric memories (FERAM, FEFET …).

The recent discovery of the CMOS compatible ferroelectric Hf(Zr)O2 thin films enables ferroelectric memory integration on standard silicon wafers. Those devices are of high interest for many applications thanks to their extreme energy-efficient (ultra low power). The primary objective of this work will be to construct a tentative SPICE/compact model for FeRAM based on numerical simulation using TCAD and experimental data. In more detail, this work consists of the following steps:

•State of the art of ferroelectric device simulation and evaluation of different simulations tools, approaches/methods to identify problems to tackle.
•Proof of concept demonstration of the TCAD/numerical simulation in the case of Metal-Ferro-Metal device integrated without or with a transistor (Ferroelectric capacitor, Ferroelectric Ramdom Access Memory, Ferroelectric Field Effect Transistor).
•Based literature results, propose the first step to build a SPICE/compact model.
•Benchmark with experimental data available at LETI and if needed dedicated electrical characterization.
The student will have at his disposal all the laboratory's testing resources: analysis tools (TCAD simulator, SPICE simulator, python suite ...) and access to experimental measurement (electrical characterization on state-of-the art devices).

MASTER 2 graduate or engineer specialized in physics and/or materials for microelectronic applications with simulation or/and electrical characterization for transistor or memory knowledge is a plus. You are curious, motivated and force of proposal. This work could lead to PhD position after the end of the internship.

 Join us and develop your skills and acquire new ones !

Still in doubt ? We can propose :

· A unique research ecosystem, dedicated to topics of major societal importance,

· Training to strengthen your skills or acquire new ones, 

· A position in the heart of the Grenoble metropolitan area, easily accessible through soft mobility promoted by the CEA, 

· A recognized work-life balance,

· Compensation based on your qualifications and experience, 

· An active Works Council (CSE) offering leisure and extracurricular activities, 

· A diversity and inclusion policy : in accordance with the CEA commitments for people with disabilities integration, this job is open to everyone.

In line with CEA's commitment to the integration of disabled people, this course is open to all. The CEA offers accommodation and/or organisational possibilities for the inclusion of disabled workers.